Br n5551 datasheet

Datasheet

Br n5551 datasheet

Amplifier Transistors NPN Silicon Features • These br are Pb− Free Devices* MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage 2N5550 2N5551 n5551 VCEOVdc Collector − Base Voltage n5551 2N5550 2N5551 VCBOVdc n5551 Emitter − Base Voltage VEBO 6. NPN SILICON n5551 PLANAR MEDIUM POWER TRANSISTORS ISSUE 2 Œ MARCH br 1994. Switching Time Test Circuit IC, COLLECTOR CURRENT ( mA) 2. We use cookies to deliver the best possible web experience and assist with our advertising efforts. ( It will updated in 12 hours. If There is not a datasheet which searches Request!

2N5401 com 4 Figure 5. com is a free electronic engineering tool that enables you to locate product datasheets from hundreds of electronic component manufacturers worldwide. 5 C, CAPACITANCE ( pF) 100 TJ = 25° C. CE1A3Q CE1A3Q- br T CE1A3Q- T- A Datasheet PDF Downlaod from n5551 Datasheet. Br n5551 datasheet. 2N5551 Transistor Datasheet pdf, 2N5551 br Equivalent.

( BR) CBO 60 80 V IC= 100µA. 4 WTamb= 25 Collector current ICM : 0. Sections of this SDS provide information regarding datasheet certain local or national requirements. SAFETY DATA SHEET MOLYKOTE( R) BR- 2 PLUS HIGH PERFORMANCE GREASE Version 5. no Sb/ Br) SNAGCU Level- 1- 260C- br UNLIM 0 to 70 P B LM79L05ACTLX/ NOPB ACTIVE DSBGA YZR 6 3000 Green ( RoHS & no Sb/ Br) SNAGCU Level- 1- 260C- UNLIM 0 to 70 P B LM79L05ACZ/ LFT1 ACTIVE TO- 92 LP 3 Green ( RoHS & no Sb/ Br) CU SN N / br A for Pkg Type n5551 320L br 79L05 LM79L05ACZ/ NOPB ACTIVE TO- 92 LP 3 1800 n5551 Green ( RoHS & no Sb/ Br) CU SN N / A for Pkg Type 0 to. 2 Revision Date: 03/ 18/ SDS Number: Date of last issue: 09/ 28/ Date of first issue: 11/ 25/ 4 / 25 determine which regulations are applicable. ZTX451 Silicon planar medium power transistor datasheet VCEO 60V. It delivers radical simplicity significantly improves security n5551 outcomes through automation unprecedented accuracy. N5551 datasheet circuit , cross reference application notes in pdf format.


1 A Collector- base voltage V( BR) CBO: 50 V ELECTRICAL CHARACTERISTICSTamb= 25 unless br otherwise datasheet specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector- n5551 base breakdown voltageV( BR) CBO Ic= 100 A I E= 0 50 V. FEATURES Power dissipation PCM : 0. Cortex is the industry' s only open and integrated AI- based continuous security platform. HK] [ CE1A3Q CE1A3Q - T CE1A3Q - T- A Datasheet PDF Downlaod from Maxim4U. Datasheets history of inquiries. ( It will datasheet updated n5551 in. 2N5551 Datasheet datasheet 2N5551 manual, free, Electronics 2N5551, br 2N5551 Data sheet, datasheet, alldatasheet, 2N5551 PDF, 2N5551, Datasheets, 2N5551 pdf, datenblatt data. We have more Special DataSheet than other site. Parameters and Characteristics.

0 Vdc Collector Current − Continuous IC 600 mAdc Total Device Dissipation. com ] : - ) [ View it Online ] [ Search more for CE1A3Q ]. By continuing to use this site, you consent to the use of cookies. Temperature Coefficients Figure 6.


Datasheet

Datasheet archive onЗапросить on- line склады. Пример: max232. These N- Channel enhancement mode power field effect transistors are produced using Fairchild' s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on- state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. 2N5551_ J61Z Datasheet PDF download( File Size: 211KB, Published:, view more in 2N5551_ J61Z manual, Fairchild BJTs 2N5551_ J61Z Specifications: Trans GP BJT. 采芯网】 作为全球电子元器件搜索引擎为您找到( Fairchild) 2N5551YTA PDF数据手册, 中文资料, Fairchild参数规格, 代换型号以及2N5551YTA供应商报价, 采购信息等, 采购2N5551YTA电子元器件就上采芯网。.

br n5551 datasheet

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